| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to secure a processing margin with decreasing the resistance of a bit line by connecting a metal bit line to a one side between both vertical channel transistors. CONSTITUTION: A hard mask layer pattern(110) is formed on the upper part of a pillar(108). A buffer oxide layer(112) is formed in the sidewall of the pillar. A junction area(122), in which an impurity ion is inserted, is formed on a silicon substrate(100) in the lower side of the pillar. An interlayer insulating layer(114) is formed in the upper part of the buffer oxide layer and the hard mask layer pattern. An oxide layer is formed in the upper part of the interlayer insulating layer and the hard mask layer pattern.</p> |
