发明名称 NON-VOLATILE MEMORY OF HAVING CELL COMPRISING DIODE
摘要 <p>PURPOSE: A nonvolatile memory is provided to electrically control a cell region and minimize the interference between cells by arranging a plurality of switching elements around the cell region. CONSTITUTION: A cell region(100) includes cells which are arranged an area in which a row-line and a column-line cross. A row address decoder(120) selects a specific row-line in the cell region. A column address decoder(140) selects a specific column-line in the cell region. A diode is in electric connection between a resistance variable layer and the row-line. The resistance variable layer is in electrical connection with the column-line.</p>
申请公布号 KR20100128376(A) 申请公布日期 2010.12.08
申请号 KR20090046744 申请日期 2009.05.28
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 LEE, SANG SUN;KIM, JUNG HA;AHN, CHANG YONG
分类号 H01L21/8247;G11C16/00;H01L27/115 主分类号 H01L21/8247
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