发明名称 |
NON-VOLATILE MEMORY OF HAVING CELL COMPRISING DIODE |
摘要 |
<p>PURPOSE: A nonvolatile memory is provided to electrically control a cell region and minimize the interference between cells by arranging a plurality of switching elements around the cell region. CONSTITUTION: A cell region(100) includes cells which are arranged an area in which a row-line and a column-line cross. A row address decoder(120) selects a specific row-line in the cell region. A column address decoder(140) selects a specific column-line in the cell region. A diode is in electric connection between a resistance variable layer and the row-line. The resistance variable layer is in electrical connection with the column-line.</p> |
申请公布号 |
KR20100128376(A) |
申请公布日期 |
2010.12.08 |
申请号 |
KR20090046744 |
申请日期 |
2009.05.28 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
LEE, SANG SUN;KIM, JUNG HA;AHN, CHANG YONG |
分类号 |
H01L21/8247;G11C16/00;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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