| 摘要 |
A method for producing a microstructure of crystalline SiC having at least one gap between structural parts thereof comprises the following steps: a first crystalline layer (2) of a material able to form a crystalline structure on crystalline SiC is epitaxially grown on a substrate (1) of crystalline SiC, a second layer (3) of crystalline SiC is epitaxially grown on top of the first layer, an opening (4) is made through said second layer to the first layer, and the first layer (2), thus forming a sacrificial layer, is etched away through said opening for forming a said gap between said second layer and substrate of crystalline SiC.
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