Method of manufacturing silicon substrate with a conductive through-hole

摘要

A method of manufacturing a substrate 10, includes: (a) forming a through hole 26 by etching a silicon substrate 21 from a first surface of the silicon substrate 21 by a Bosch process; (b) forming a thermal oxide film 39 such that the thermal oxide film 39 covers the first surface of the silicon substrate 21, a second surface of the silicon substrate 21 opposite to the first surface, and a surface of the silicon substrate 21 corresponding to a side surface of the through hole 26, by thermally oxidizing the silicon substrate 21 where the through hole 26 is formed; (c) removing the thermal oxide film 39; (d) forming an insulating film 22 such that the insulating film 22 covers the first and second surfaces of the silicon substrate 21 and the surface of the silicon substrate 21 corresponding to the side surface of the through hole 26; and (e) forming a through electrode 23 in the through hole 26 on which the insulating film 22 is formed.