| 摘要 |
PURPOSE: A nonvolatile memory device and a programming method thereof are provided to reduce program time by changing a program start voltage after recognizing the threshold voltage distribution of a memory cell. CONSTITUTION: A memory cell array(310) comprises a main cell part(311) and a spare cell part(312). A page buffer part(320) comprises page buffers which temporarily save data after reading out the data. An X decoder(330) selects a memory block in the memory cell and enables the block. A voltage supply part(340) supplies an operating voltage for a programming process or a reading-out process. A control part(350) determines a program start voltage(Vpgm start).
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