| 摘要 |
<p>PURPOSE: A semiconductor device is provided to reduce the power consumption of a surrounding gate transistor by forming the shape of a source and a drain into a concaved shape. CONSTITUTION: A first insulator(310) surrounds the lateral side of a first conductive type third silicon pillar(830). A gate(210) surrounds the first insulator. A first silicon pillar(810) is formed on the lower part of the third silicon pillar. A second silicon pillar(820) is formed on the upper side of the third silicon pillar. A second conductive type dopant region(610) with high concentration surrounds a first conductive type dopant region(510).</p> |
