发明名称 NON VOLATILE MEMORY AND METHOD OF PROGRAMING THEREOF
摘要 PURPOSE: A nonvolatile memory device and a programming method thereof are provided to implement a program operation without inputting new program data by reading the program data stored in a page buffer and transferring it to a new page buffer connected to a different memory block except for a selected memory block. CONSTITUTION: First and second memory blocks(110, 120) comprise a plurality of memory cells storing program data. Second page buffer parts(130, 140) are respectively connected to the first and second memory blocks. A controller part(150) transmits the program data inputted from the outside to the selected first page buffer part.
申请公布号 KR20100129063(A) 申请公布日期 2010.12.08
申请号 KR20090047819 申请日期 2009.05.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAEK, KWANG HO;CHUNG, JUN SEOP;PARK, SE CHUN
分类号 G11C16/34;G11C16/06;G11C16/10 主分类号 G11C16/34
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