发明名称 |
BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION |
摘要 |
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry. |
申请公布号 |
EP1933992(A4) |
申请公布日期 |
2010.12.08 |
申请号 |
EP20060813979 |
申请日期 |
2006.08.30 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
OLANDER, KARL, M.;ARNO, JOSE, I.;KAIM, ROBERT |
分类号 |
B05D3/06;C23C14/14;C23C14/24;C23C14/46;C23C14/48;H01J37/08;H01J37/317;H01L21/265;H01L21/425 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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