| 摘要 |
PURPOSE: A non volatile memory device and a program method thereof are provided to improve retention properties and a cycling property by discharging the potential of a bit line to be programmed. CONSTITUTION: A memory cell array(100) comprises a memory cell, a word line, and a bit line. A page buffer(200) is interposed between the bit line and an input/output terminal. The page buffer includes a bit line selection unit(210), a precharge unit(220), and a latch(230). The bit line selection unit includes a plurality of NMOS transistors(NM1-NM4). A precharge unit includes a PMOs transistor(PM1). The latch unit includes a plurality of NMOS transistor(NM5-NM9) and an inverter(IV1-IV2). |
