METHOD OF FABRICATING ZINC OXIDE BASED FILM

摘要

PURPOSE: A method for manufacturing a zinc oxide based film, capable of the replacement of ITO film with zinc oxide film, is provided to secure an excellent deposition rate and flatness comparing to ITO by securing superior electricity conductance. CONSTITUTION: A method for manufacturing a zinc oxide based film comprises next steps. Sputtering is performed under the conditions of the distance of a dopan doped zinc oxide target and a substrate is 10~50 mm. The zinc oxide film is evaporated in a substrate. The sputtering is performed under the condition that the work pressure is 2~10mtorr and the flow rate of the sputtering gas supplied to a sputtering chamber is 0.2~0.5sccm/L.