Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof

摘要

An insulated gate planar power device with a Schottky diode in parallel thereto, said Schottky diode being realized by contacting with a metal layer a semiconductor substrate of a first type of conductivity and the contact zone being laterally surrounded by one or more diffused regions of opposite type of conductivity formed in said substrate for shielding the electric field under conditions of reverse bias of the diode, characterized in that it comprises, in said semiconducting substrate, a buried region doped with a dopant of opposite type of conductivity to that of said semiconductor substrate, geometrically located under said Schottky contact zone and at a greater depth than the depth of said diffused regions. A relative process of fabrication is also disclosed.