Manufacturing method of one level of a tridimensional integrated circuit by tridimensional sequential integration

摘要

The method involves forming a mono-crystal semiconductor substrate (36) with an interposed thermal oxide layer on a semiconductor support, where the substrate is made of silicon. A free surface of the mono-crystal semiconductor substrate is placed on an upper surface of another semiconductor support (30). The former semiconductor support is removed. The thermal oxide layer e.g. silicon oxide layer, is thinned down to a thickness forming a gate insulator by atomic cluster or monomer based ion beam.