SEMICONDUCTOR DEVICE

摘要

In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device according to the present invention includes: an n - type semiconductor layer (2) formed on an n + type semiconductor substrate (1); a first electrode (3) that is formed on the n - type semiconductor layer and functions as a Schottky electrode; a GR layer (4) that is a first p type semiconductor layer formed on a surface of the n - type semiconductor layer below an end (3E) of the first electrode and a perimeter thereof; a JTE layer (5) that is formed of a second p type semiconductor layer formed on a bottom (9B) and a lateral surface (9S) of a groove (9) arranged in a ring shape around the GR layer apart from the GR layer, in a surface (2S) of the n - type semiconductor layer; an insulating film (7) provided so as to cover the GR layer and the JTE layer; and a second electrode (6) that is an Ohmic electrode formed below a rear surface of the n + type semiconductor substrate.