发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION |
摘要 |
<p>A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.</p> |
申请公布号 |
EP2257997(A1) |
申请公布日期 |
2010.12.08 |
申请号 |
EP20080715033 |
申请日期 |
2008.03.25 |
申请人 |
LATTICE POWER (JIANGXI) CORPORATION |
发明人 |
JIANG, FENGYI;LIU, JUNLIN;WANG, LI |
分类号 |
H01L33/00;H01L33/40;H01L33/44 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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