| 摘要 |
PURPOSE: An exposure mask is provided to prevent subpatterns from transferring on a wafer and to manufacture a semiconductor device with high precision due to high dimension precision. CONSTITUTION: An exposure mask(1) used to transfer a pattern defined by exposure onto a wafer includes: a substrate(11); a pattern formation region(15) provided on the substrate, and having pattern elements formed therein, the pattern elements having a size not smaller than a resolution limit after being transferred onto the wafer; and a sub-pattern formation region(18) provided on the substrate and having sub-pattern elements formed therein. The sub-pattern element has a size smaller than the resolution limit after being transferred onto the wafer, and the sub-pattern formation region is spaced from the pattern formation region by a distance having no optical proximity effect on the pattern. |
