| 摘要 |
PURPOSE: A phase change RAM device and a manufacturing method thereof are provided to minimize that heat, which is generated during a phase change process, is transferred to the adjacent cell through a phase change layer by forming a phase change layer on a nitride layer. CONSTITUTION: An interlayer insulating layer(104) is formed within a semiconductor substrate(100). A plurality of diodes(110) are formed on an active area within the interlayer insulating layer. A first and a second nitride layer(114,116) are sequentially formed on the interlayer insulating layer. The second nitride layer comprises a protrusion part(A) which is arranged in the upper part of the interlayer insulating layer between the diodes. A phase change layer(122) is formed on the interlayer insulating layer.
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