| 摘要 |
<p>PURPOSE: A photomask for forming pattern using modified illumination system, method of fabricating the photomask, and method of forming the pattern using the photomask are provided to form the desired profile pattern in horizontal and vertical directions by arranging an assistance pitch pattern of pin hole shape on a photomask. CONSTITUTION: A transparent substrate(400) is made of quartz. A phase inversion pattern(420) is arranged on the transparent substrate. The phase inversion pattern is arranged in order to limit a plurality of first areas(410). An assist feature pattern(430) is arranged between the first areas along the second direction on the phase inversion pattern.</p> |
