| 发明名称 |
Semiconductor light emitting device comprising uneven substrate |
| 摘要 |
At least one depression (20) and /or projection (21) for scattering or diffracting light generated in a light emitting region (12) is formed in the surface of a substrate (10). The recess and /or projection is so shaped as to generate no crystal defects in semiconductor layers (11, 13) |
| 申请公布号 |
EP2259339(A1) |
申请公布日期 |
2010.12.08 |
| 申请号 |
EP20100171092 |
申请日期 |
2002.07.24 |
| 申请人 |
NICHIA CORPORATION |
发明人 |
NIKI, ISAMU;YAMADA, MOTOKAZU;SANO, MASAHIKO;SHIOJI, SHUJI |
| 分类号 |
H01L33/00;H01L33/38;H01L33/22;H01L33/24;H01L33/32;H01L33/42 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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