| 摘要 |
To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 m Si(OR 2 ) 4-m €ƒ€ƒ€ƒ€ƒ€ƒ(1),
wherein R 1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R 1 s are present, R 1 s may be the same or different, R 2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R 2 s are present, R 2 s may be the same or different, and m represents an integer of 1 to 3,
and an epoxy group-containing silane compound represented by the general formula (2):
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 3 n R 4 1 Si (OR 5 ) 4-n-1 €ƒ€ƒ€ƒ€ƒ€ƒ(2),
wherein R 3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R 3 s are present, R 3 s may be the same or different, R 4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R 4 s are present, R 4 s may be the same or different, R 5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R 5 s are present, R 5 s may be the same or different, 1 represents an integer of 0 to 2, and n represents 1 or 2 (however, 1 + n ‰¤ 3) . |
