| 摘要 |
PURPOSE: A semiconductor device is provided to easily implement an integrated circuit integrated with components having various threshold voltages by controlling the threshold voltage of a transistor by controlling the operating voltage applied to the semiconductor pattern. CONSTITUTION: A first separation oxide(125) is formed on a semiconductor substrate(111). An active pattern(131) is formed on a first separation insulation pattern. A semiconductor pattern(127) is formed between the semiconductor substrate and the first separation insulation pattern. A second separation insulation pattern(124) is formed between the semiconductor substrate and the semiconductor pattern. |
