A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device and a substrate processing apparatus are provided to form a metal compound film on a substrate to be processed by performing a reaction using a first gas which is reactive with respect to either of an inorganic metal compound or an organic metal compound. CONSTITUTION: A substrate(200) is placed in a processing chamber(201). A heater(207) heats the substrate. A first gas supplying pipe(310) supplies a metal compound to the processing chamber. A second gas supplying pipe(320) supplies a reaction gas which is reactive with respect to the metal compound into the processing chamber. An exhaust pipe(231) exhausts atmosphere from the processing chamber.