发明名称 |
Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device |
摘要 |
A group III-V nitride-based semiconductor substrate is formed of a group III-V nitride-based semiconductor single crystal containing an n-type impurity. The single crystal has a periodical change in concentration of the n-type impurity in a thickness direction of the substrate. The periodical change has a minimum value in concentration of the n-type impurity not less than 5×1017 cm−3 at an arbitrary point in plane of the substrate.
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申请公布号 |
US7847313(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20070716918 |
申请日期 |
2007.03.12 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
SHIBATA MASATOMO |
分类号 |
H01L33/30;H01L33/06;H01L33/32;H01L33/40 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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