| 摘要 |
A method of forming a dummy pattern on a mask for fabricating a semiconductor device is disclosed. The method may include a step of calculating a distance in a device isolation area between a first chip area and a second chip area having different pattern densities. In addition, the method may include comparing the distance and a first reference distance. The method may further include forming the dummy pattern in the device isolation area based on the comparison result. The dummy pattern may have a plurality of partitions. Each of the plurality of partitions may have a pattern density according to a position of the partition. A quantity of the partitions may be based on the comparison result. And at least one partition may have a pattern density which is substantially equal to an average of the pattern densities of the first and the second chip areas.
|
