发明名称 |
Circuit to control voltage ramp rate |
摘要 |
A programming circuit and method to apply a controlled or predetermined voltage pulse for charge transfer to or from the floating gate of a non-volatile memory cell in an incremental manner to control the overall voltage across the gate oxide. Voltage above a transfer threshold voltage, such as above a tunneling threshold voltage, is applied in a stepwise charge transfer manner to or from the floating gate up to a voltage limit that is below the thin oxide damage threshold. Controlling the overall voltage avoids oxide breakdown and enhances reliability.
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申请公布号 |
US7848151(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20090398805 |
申请日期 |
2009.03.05 |
申请人 |
ATMEL CORPORATION |
发明人 |
CHAN JOHNNY;NG PHILIP S.;RENNINGER ALAN L.;SON JINSHU;TSAI JEFFREY M.;WONG TIN-WAI;WU TSUNG-CHING |
分类号 |
G11C11/34;G11C5/14;G11C7/10;G11C16/04;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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