发明名称 Semiconductor layer structure and method of making the same
摘要 A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device.
申请公布号 US7846814(B2) 申请公布日期 2010.12.07
申请号 US20080165475 申请日期 2008.06.30
申请人 发明人 LEE SANG-YUN
分类号 H01L21/30;H01L21/20;H01L21/336;H01L21/46;H01L21/58;H01L23/48;H01L27/108;H01L27/148 主分类号 H01L21/30
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