发明名称 |
Method for removing a halogen-containing residue |
摘要 |
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
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申请公布号 |
US7846347(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20070779972 |
申请日期 |
2007.07.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KAWAGUCHI MARK N.;PAPANU JAMES S.;WILLIAMS SCOTT;DAVIS MATTHEW FENTON |
分类号 |
C03C15/00;H01L21/02;H01L21/302;H01L21/311;H01L21/461 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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