发明名称 MRAM and data read/write method for MRAM
摘要 An MRAM according to the present invention is provided with a magnetic recording layer being a ferromagnetic layer and a pinned layer connected to the magnetic recording layer through a nonmagnetic layer. The magnetic recording layer includes a magnetization switching region, a first magnetization fixed region and a second magnetization fixed region. The magnetization switching region has reversible magnetization and overlaps with the pinned layer. The first magnetization fixed region and the second magnetization fixed region are both connected to the same one end of the magnetization switching region. Also, the first magnetization fixed region and the second magnetization fixed region respectively have first fixed magnetization and second fixed magnetization whose directions are fixed. One of the first fixed magnetization and the second fixed magnetization is fixed in a direction toward the above-mentioned one end, and the other is fixed in a direction away from the above-mentioned one end.
申请公布号 US7848137(B2) 申请公布日期 2010.12.07
申请号 US20070294397 申请日期 2007.03.20
申请人 NEC CORPORATION 发明人 FUKAMI SHUNSUKE;KASAI NAOKI
分类号 G11C11/00 主分类号 G11C11/00
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