发明名称 |
Silicon wafer for IGBT and method for producing same |
摘要 |
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.
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申请公布号 |
US7846252(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20070877806 |
申请日期 |
2007.10.24 |
申请人 |
SUMCO CORPORATION |
发明人 |
UMENO SHIGERU;OURA YASUHIRO;KATO KOJI |
分类号 |
C30B15/00;C30B21/04;C30B21/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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