| 摘要 |
<p>PURPOSE: A method for verifying the layout of an optical-proximity-corrected contact pattern is provided to improve the reliability of verification by overlapping the optical-proximity corrected contact pattern with a simulation contour. CONSTITUTION: The layout of target contact patterns(100) with different shapes is acquired. The layout is optical-proximity-corrected. A simulation contour(101) is acquired by simulating the layout. The layout and the simulation contour are overlapped. First critical dimension(CD)s of the simulation contour to a horizontal direction and a vertical direction(301, 303) are measured. Second CDs of the layout are measured. A ratio of the first CDs and the second CDs is acquired.</p> |
