| 摘要 |
PURPOSE: An oxide thin film transistor and a method of fabricating the same are provided to prevent the deformation of the amorphous zinc oxide group semiconductor which generated during etching the source/drain electrode by forming an active layer on the source/drain electrode. CONSTITUTION: A gate electrode(221) is formed on a substrate(210). A gate insulating layer(215) is formed on the substrate. A first source/drain electrode(222a, 223a) is formed on the gate insulating layer. The first source/drain electrode(222b, 223b) is formed on the first source/drain electrode. An active layer(224) electrically connects with the second source/drain electrode. |
