| 摘要 |
An object of the present invention is to provide a semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. The present invention provides a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 are formed on a substrate 11, a transparent positive electrode 16 is formed on the p-type semiconductor layer 15, a positive electrode bonding pad 17 is formed on the transparent positive electrode 16, and a negative electrode bonding pad 18 is formed on the n-type semiconductor layer 13. |
