| 摘要 |
PURPOSE: A method for fabricating a phase shift mask in extrea ultra-violet lithography is provided to improve optical density of a frame region by forming a reflection reduction part on an absorption layer pattern of a frame region. CONSTITUTION: A method for fabricating a phase shift mask in extrea ultra-violet lithography includes the steps of: forming a reflective layer for extreme ultraviolet radiation on a substrate including main chip regions(210) and frame region(220); forming a phase shifter layer pattern on the reflective layer so that the reflective layer is selectively exposed; and forming a reflectance reduction part(360) blocking extrea ultra-violet lithography on the phase shifter layer pattern. |
