发明名称 MEMORY SYSTEM AND BAD BLOCK MANAGEMENT METHOD THEREOF
摘要 PURPOSE: A memory system and a bad block management method thereof are provided to improve the efficiency of a memory block. CONSTITUTION: A first step is processed to determine that a memory block satisfies a bad block condition(S110). When the memory block satisfies the bad block condition, a subsequent treatment operates in the memory block(S120). The memory block is allocated to the bad block(S130). When the bad block satisfies a bad block release condition, the bad block is released. The subsequent treatment programs a cell in the erase state into a program state cell or stores the timing to assign the memory block as the bad block.
申请公布号 KR20100127398(A) 申请公布日期 2010.12.06
申请号 KR20090045827 申请日期 2009.05.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG JUN;KONG, JUN JIN;KIM, JAE HONG;YOO, HAN WOONG
分类号 G06F12/06;G06F12/00;G06F12/16 主分类号 G06F12/06
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