发明名称 EUV MASK
摘要 <p>PURPOSE: An extreme ultraviolet ray mask is provided to transfer fine patterns without the deformation of the patterns by preventing the generation of a pattern shift phenomenon due to a stepped part. CONSTITUTION: A reflecting plate(20) is arranged on both the right side and the left side of a supporting board. The reflecting plate is composed of a first reflecting plate(21) and a second reflecting plate(23). A tilt driving part is in connection with the rear side of the reflecting plate. A tilt controlling part controls the operation of the tilt driving part. The tilt driving part tilts the slope of the first reflecting plate in order to form a mask layout(60).</p>
申请公布号 KR20100127665(A) 申请公布日期 2010.12.06
申请号 KR20090046195 申请日期 2009.05.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WOO, SUNG HA
分类号 H01L21/027;H01L21/32 主分类号 H01L21/027
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