| 摘要 |
<p>PURPOSE: A power semiconductor device and a manufacturing method thereof are provided to improve a heat radiation property and reduce a current resistance by increasing contact areas between the bridge and a lead, and between the bridge and the semiconductor die. CONSTITUTION: At least one second lead(120) is separated from a first lead. A semiconductor die(150) is electrically connected to the first lead. A bridge(200) connects the semiconductor die to the second lead with a first conductive adhesive. An encapsulant encapsulates the first lead, the second lead, the semiconductor die, the bridge, and the first conductive adhesive. The first conductive adhesive surrounds the first opening, the upper side corresponding to the first opening, the lower side corresponding to the first opening, and the side of the first opening.</p> |
