发明名称 METHOD FOR FABRICATING PHASE SHIFT MASK USING BINARY BLANK
摘要 <p>PURPOSE: A method for forming a phase shift mask using a binary blank is provided to prevent the generation of bridge defects due to a light shielding film pattern by preventing the residue of a light shielding film from remaining on a phase shift film pattern. CONSTITUTION: A main cell region(A) and a frame region(B) are defined on a transparent substrate(100). A light shielding pattern is formed on the transparent substrate. A phase shift layer is formed on the transparent substrate for burying the light shielding pattern. The phase shift layer is eliminated in order to form a phase shift pattern(135). A resist layer is formed on the light shielding pattern and the phase shift pattern. A resist layer pattern(145) is formed by patterning the resist layer.</p>
申请公布号 KR20100127664(A) 申请公布日期 2010.12.06
申请号 KR20090046194 申请日期 2009.05.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, YOUN GEUN
分类号 H01L21/027;G03F1/08 主分类号 H01L21/027
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