| 摘要 |
<p>PURPOSE: The exposure processing method of a reflective photo-mask is provided to form a resist pattern self-aligned on the critical dimension of an absorbing pattern using difference between exposure energies of exposure energy to an absorbing pattern and reflected energy from a reflective layer. CONSTITUTION: A reflective layer(110) is formed on a substrate(100). A capping layer(115) is formed on the reflective layer. A buffer layer is formed on the capping layer. An absorbing layer is formed on the buffer layer. An absorbing pattern(140) and a buffer pattern are formed in order to selectively expose the surface of the capping layer. A resist layer is formed to bury the capping layer and the absorbing layer. The resist layer on the reflective layer is selectively deformed. The deformed resist layer is eliminated.</p> |
