发明名称 |
METAL CATALYZED SELECTIVE DEPOSITION OF MATERIALS INCLUDING GERMANIUM AND ANTIMONY |
摘要 |
A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material. |
申请公布号 |
KR20100119756(A) |
申请公布日期 |
2010.11.10 |
申请号 |
KR20107016879 |
申请日期 |
2008.01.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUHA SUPRATIK;MCFEELY FENTON R.;YURKAS JOHN J. |
分类号 |
C23C16/455;C23C16/02;C23C16/52;H01L21/205 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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