发明名称
摘要 By circular or polygonal openings formed in at least one of a metal film, a semiconductor film, an insulating film and the like, which films are below a reflecting electrode, minute irregularities are densely formed on a surface of the reflecting electrode. In this case, it is required that a linear density defined by peripheral dimensions of the openings per unit area is equal to 0.2 or more.
申请公布号 JP4578958(B2) 申请公布日期 2010.11.10
申请号 JP20040364750 申请日期 2004.12.16
申请人 发明人
分类号 G02F1/1335;G02F1/1337 主分类号 G02F1/1335
代理机构 代理人
主权项
地址