发明名称 |
THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS |
摘要 |
The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases. |
申请公布号 |
KR20100119750(A) |
申请公布日期 |
2010.11.10 |
申请号 |
KR20107015246 |
申请日期 |
2008.10.30 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
ARENA CHANTAL;WERKHOVEN CHRISTIAAN J.;BERTRAM JR. RONALD THOMAS;LINDOW ED |
分类号 |
C23C16/452;C23C16/30;C23C16/448 |
主分类号 |
C23C16/452 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|