| 摘要 |
<p>An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.</p> |
