发明名称 |
PLASMA PROCESS APPARATUS AND PLASMA PROCESS METHOD |
摘要 |
PURPOSE: A plasma processing device and a method thereof are provided to improve the reproduction of processing plasma while maintaining a process temperature low. CONSTITUTION: A holding support unit(28) supports a plurality of objects and inserts them to be divided. A gas supply unit(48) supplies gas to a processing chamber. An activation unit(58) makes the gas activated by plasma which is generated by high frequency power. An absorption header is installed at the end of the housing and receives cooling gas. |
申请公布号 |
KR20100119726(A) |
申请公布日期 |
2010.11.10 |
申请号 |
KR20100040640 |
申请日期 |
2010.04.30 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ONODERA NAOMI;GOKON KIYOHIKO;SATO JUN |
分类号 |
H01L21/205;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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