| 摘要 |
FIELD: physics. ^ SUBSTANCE: ion implantation method involves formation of plasma inside a working chamber and supplying pulsed acceleration voltage. According to the invention, implantation is carried out from pulsed laser plasma containing multicharged ions. Pulsed acceleration voltage is applied either across a substrate or across a target, wherein the delay between the laser pulse and the pulse of acceleration voltage is determined using a calculation formula which links the distance from the target to the substrate, the centre-of-mass velocity of components with maximum charge, temperature of the ion components with maximum charge, mass and Boltzmann constant. ^ EFFECT: wider range of implanted substances and selective implantation of muticharged ions. ^ 4 cl, 2 ex |
