| 摘要 |
<p>The invention relates to an imager pixel used in back surface technology that includes an absorption layer made of crystalline silicon (4) having a single type of doping, and in which is formed at least one carrier collection electrode (7) to which a first potential (V1) is applied, characterised in that the imager pixel further includes: an absorption layer made of amorphous silicon (5) attached to a surface of the absorption layer made of crystalline silicon (4), and in which a diode (5a, 5b) is formed; and a transparent electrode (6) attached to the absorption layer made of amorphous silicon (5), and to which a second potential (V2) is applied, the potential difference between the first potential and the second potential leading to a reverse bias of the diode. The invention can be used in the field of imaging.</p> |
