发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
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申请公布号 |
US7808077(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20080185578 |
申请日期 |
2008.08.04 |
申请人 |
PANASONIC CORPORATION |
发明人 |
EGASHIRA KYOKO;HASHIMOTO SHIN |
分类号 |
H01L23/522;H01L29/00;H01L21/02;H01L21/768;H01L21/822;H01L27/04;H01L27/08 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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