发明名称 Semiconductor device and method for fabricating the same
摘要 A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.
申请公布号 US7808077(B2) 申请公布日期 2010.10.05
申请号 US20080185578 申请日期 2008.08.04
申请人 PANASONIC CORPORATION 发明人 EGASHIRA KYOKO;HASHIMOTO SHIN
分类号 H01L23/522;H01L29/00;H01L21/02;H01L21/768;H01L21/822;H01L27/04;H01L27/08 主分类号 H01L23/522
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