发明名称 Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process
摘要 Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
申请公布号 US7807485(B2) 申请公布日期 2010.10.05
申请号 US20090509551 申请日期 2009.07.27
申请人 CANON KABUSHIKI KAISHA 发明人 UCHIDA TATSURO;IKUTA MITSUHIRO;TAKEUCHI TETSUYA
分类号 H01L21/00;H01S5/00 主分类号 H01L21/00
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