发明名称 Transmission mask with differential attenuation to improve ISO-dense proximity
摘要 An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
申请公布号 US7807342(B2) 申请公布日期 2010.10.05
申请号 US20050303301 申请日期 2005.12.16
申请人 INFINEON TECHNOLOGIES AG;UNITED MICROELECTRONICS CO 发明人 LIU HANG YIP;SCHMIDT SEBASTIAN;LIN BENJAMIN SZU-MIN
分类号 G03F7/20;G03C5/00;G03F1/00;G03F1/08;G03F1/14;G03F9/00 主分类号 G03F7/20
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