发明名称 |
Transmission mask with differential attenuation to improve ISO-dense proximity |
摘要 |
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
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申请公布号 |
US7807342(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20050303301 |
申请日期 |
2005.12.16 |
申请人 |
INFINEON TECHNOLOGIES AG;UNITED MICROELECTRONICS CO |
发明人 |
LIU HANG YIP;SCHMIDT SEBASTIAN;LIN BENJAMIN SZU-MIN |
分类号 |
G03F7/20;G03C5/00;G03F1/00;G03F1/08;G03F1/14;G03F9/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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