发明名称 METHOD OF PRODUCTION OF GRAPHENE
摘要 <p>PURPOSE: A grapheme manufacturing method for annealing under irradiation and annealing is provided to obtain the grapheme on a surface of a substrate without requesting a moving stage on a supporter phase of the supporter extrinsic used grapheme layers. CONSTITUTION: A manufacturing method of grapheme includes as follows. A layer which includes in the top of the substrate amorphous carbon vaporizes. Grapheme anneals layer under the photon investigation and/or the electron irradiation. The substrate in which substrate includes the silicon. The substrate having unit cell having substrate is specific orientation. The silicon carbide substrate having the specific orientation is preferably grown up to the epitaxial type. The photon investigation is the laser irradiation.</p>
申请公布号 KR20100107403(A) 申请公布日期 2010.10.05
申请号 KR20100025694 申请日期 2010.03.23
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 ZENASNI AZIZ
分类号 C01B31/02;B01J19/08;C23C16/26;C23C16/513 主分类号 C01B31/02
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