发明名称 |
Method of forming a TEOS cap layer at low temperature and reduced deposition rate |
摘要 |
A method for forming a silicon dioxide cap layer for a carbon hard mask layer for patterning of polysilicon line features having critical dimensions of 50 nm and less is provided. To this end, a low temperature plasma enhanced CVD process is used in which the deposition rate is maintained low to provide improved controllability of the layer thickness and, thus, of the optical characteristics of the silicon dioxide layer.
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申请公布号 |
US7807233(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20040835411 |
申请日期 |
2004.04.29 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
RUELKE HARTMUT;HUY KATJA;ROMERO KARLA |
分类号 |
H05H1/24;C23C16/00;C23C16/40;H01L21/027;H01L21/033;H01L21/314;H01L21/316;H01L21/3213 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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