发明名称 |
Lanthanide series metal implant to control work function of metal gate electrodes |
摘要 |
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal nitride is formed above a gate dielectric. A lanthaide series metal is implanted into the metal screen layer above the gate dielectric. The lanthaide metal is contained in the screen layer or at the interface between the screen metal layer and the gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
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申请公布号 |
US7807522(B2) |
申请公布日期 |
2010.10.05 |
申请号 |
US20070700278 |
申请日期 |
2007.01.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ALSHAREEF HUSAM;RAMIN MANFRED;PAS MICHAEL F. |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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